Publicaciones

DEPARTAMENTO DE FÍSICA APLICADA

Publicaciones

Artículos en revistas extranjeras (a partir de 1995)

Artículos en revistas nacionales (a partir de 1994)

Colaboraciones en libros colectivos (a partir de 1992)

Libros (a partir de 1992)

1995

	M. Aït-Lhouss, J.L. Castaño, B.J. García, J. Piqueras. Atomic layer epitaxy of GaAs from tertiarybutylarsine and triethylgallium. Journal of Applied Physics 78, 5834 (1995).
	J.M.Albella, C.Gómez-Aleixandre, O.Sánchez, L. Vázquez, J.M.Martínez-Duart. Deposition of diamond and boron nitride coatings by CVD techniques. Surface and Coatings Technology 70, 163 (1995).
	R. M. Bueno, J. F. Trigo, J. M. Martínez-Duart, E. Elizalde, J. M. Sanz. Study of the determination of optical constants of thin films: Dependence on the theoretical assumptions. Journal of Vacuum Science and Technology A 13 (5), 2378 (1995).
	R. Díaz, J.M. Merino, F. Rueda, M. León. Charaterization of quaternary CuGa_1-xIn_xTe₂ thin films deposited by thermal evaporation. Journal of Physics D: Applied Physics 28, 1162 (1995).
	E. García-Camarero, J. Ramiro, E. Fatas Quantum efficiency of graded cadmium mercury telluride thin films formed by cathodic electrodeposition. Solar Energy Materials and Solar Cells 39, 27 (1995).
	B.J. García, C. Fontaine, A. Muñoz-Yagüe. Frequency analysis of reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on nominal oriented (111)B. Applied Physics Letters 66, 610-612 (1995).
	B.J. García, C. Fontaine, A. Muñoz-Yagüe. GaAs growth on (111)B substrates by molecular beam epitaxy: a study of the first stages of growth on UV-ozone prepared substrates. Journal of Vacuum Science and Technology B 13, 281 (1995).
	B.J. García, C. Fontaine, W.W. Rühle, J. Collet, A. Ponchet. Growth characterization and exploitation of epitaxial III-V compound semiconductors on novel index surface. Microelectronics Journal 26, (7) (1995).
	F.J. Gómez, J. Martínez, J. Garrido, C. Alexandre, J. Piqueras. Electron cyclotron resonance plasma deposition of amorphous SiC. Journal of Non Crystalline Solids 191, 164 (1995).
	R. Gómez-San Román, R. Pérez-Casero, J. Perrière, J. P. Enard, J.M. Martínez-Duart. Kinetics and mechanism of plasma oxidation of tantalum silicides. Journal of Vacuum Science and Technology A 13, 54 (1995).
	R. Guerrero-Lemus, J.L.G. Fierro, J.D. Moreno, J.M. Martínez-Duart. X-Ray Photoelectron Spectroscopy of luminescent porous silicon. Materials Science and Technology 11, 711 (1995).
	S. Holgado, J. Martínez, J. Garrido, J. Piqueras. Regrowth process study of amorphous BF2+ ion implanted silicon layers through spectroscopic ellipsometry. Applied Physics A 60, 325 (1995).
	C. Jiménez, S. Gilles, C. Bernard, R. Madar. Deposition of TiN thin films by organometallic chemical vapor deposition: thermodynamical predictions and experimental results. Surface and Coatings Technology 76/77, 237 (1995).
	C. Jiménez, S. Gilles, P. Doppelt, C. Bernard, R. Madar. Preparation of aluminium nitride films by lox pressure organometallic chemical vapor deposition. Surface and Coatings Technology 76/77, 372 (1995).
	J.M. Martínez-Duart, V.P. Parkhutik, R. Guerrero, D. Moreno. Electroluminescent porous silicon. Advanced Materials 7, 226 (1995).
	C. Morant, A. Fernández, A.R. Gonzalez-Elipe, L. Soriano, A. Stampfl, A.M. Bradshaw, J.M. Sanz. Electronic structure of stoichiometric and Ar⁺ bombarded ZrO₂ determined by resonant photoemission. Physical Review B 52, 11711 (1995).
	O.Najmi, I.Montero, L.Galán, J.M.Albella. Study of anodic silicon oxide transformation during the breakdown process. Materials Science Forum 185/188, 535 (1995).
	V.P. Parkhutik, J.M. Martínez-Duart. Photoluminiscent properties of porous films of tantalum silicides. Thin Solid Films 255, 298 (1995).
	R. Pérez-Casero, J. Perrière, J.P. Enard, J.M. Martínez-Duart. Plasma oxidation mechanism in tungsten silicide thin films. Journal of Applied Physics 78, 514 (1995).
	J. Pérez-Rigueiro, M. Fernández, C. Jiménez, R. Pérez Casero, J.M. Martínez-Duart. Effects of rapid thermal treatments on Ti/TiN/Si structures for electrical contacts on silicon. Materials Science and Technology 11, 1210 (1995).
	P. Prieto, A. Fernández, L. Soriano, F. Yubero, E. Elizalde, A.R. Gozalez-Elipe, J.M. Sanz. Electronic structure of insulating Zr₃N₄ studied by resonant photoemission. Physical Review B 51, 17984 (1995).
	L. Soriano, M. Abbate, J. Faber, C. Morant, J.M. Sanz. The electronic structure of ZrO₂: band structure calculations compared to electron and X-ray spectra. Solid State Communications 93, 659 (1995).

1996

	A. Arranz, C. Palacio. Characterization of the surface and interface species formed during the oxidation of aluminum. Surface Science 355, 203 (1996).
	A. Arranz, C. Palacio. Surface characterization of aluminum nitride thin films formed by nitrogen implantation. Technique and Applications 279, 134 (1996).
	A. Caballero, J. P. Espinos, A. Fernandez, L. Soriano and A.R. Gonzalez- Elipe Adsorption and oxidation of K deposited on graphite Surface Science 364, 253 (1996).
	M. Cervera, J. Martínez, J. Garrido, J. Piqueras. Temperature evolution during scanning electron beam processing of silicon. Applied Physics A62, 451 (1996).
	F.J. Gómez, J. Garrido, J. Martínez, J. Piqueras. Rapid thermal annealing behavior of amorphus SiC layers deposited by electron resonance plasma. Journal of Electrochemical Society 143, 1, 271 (1996).
	F.J. Gómez, P. Prieto, E. Elizalde, J. Piqueras. SiCN alloys deposited by electron resonance plasma chemical vapor deposition. Applied Physics Letters 69, 773 (1996).
	R. Gómez-San Román, R. Pérez-Casero, C. Marechal, J.P. Enard and J. Perrière. 18O Isotopic Tracing Studies of the Laser Ablation of Bi₂Sr₂Ca₁Cu₂O₈. J. Appl. Phys. 80 (3),1787 (1996 ).
	J. Gonzalo, C.N. Afonso, J. Perrière and R. Gómez-San Román. The Importance of Gas Scattering Processes on the Stoichiometry Deviations of Laser Depostied Films. Appl. Surf. Sci. 96-98, 693 (1996).
	O. Guillot-Nöel, R. Gómez-San Román, J. Perrière, J. Hermann, V. Craciun, Ch. Boulmer-Leborgne and P. Barboux. Growth of apatite films by laser ablation: Reduction of the droplet areal density. J. Appl. Phys. 80 (3), 1803 (1996).
	M.J. Hernández, J. Garrido, J. Martínez, J. Piqueras. Electrical properties of ECR plasma deposited SiO₂: Effect of the oxygen to silane flow ratio. Semiconductor Science Technology 11, 422 (1996).
	S. Holgado, J. Martínez, J. Garrido, C. Morant, J. Piqueras Rapid solid phase recrystallization of nanocrystalline silicon deposited by electron cyclotron plasma CVD. Applied Physics Letters 69, 13 (1996).
	R. Pérez-Casero, R. Gómez-San Román, C. Maréchal, J.P. Enard and J. Perrière. Laser Abaltion of Oxides: Study of the Oxygen Incorporation by 18O Isotopic Tracing Techniques. Appl. Surf. Sci. 96-98, 697 (1996).
	J. Pérez-Rigueiro, C. Jiménez, R. Pérez-Casero, J.M.Martínez-Duart. Non- linear analysis of the I-V characteristics in Ti/Si and TiSi2/Si Schottky diodes. Journal of Vacuum and Science Technology B14(4), 2623-2626 (1996).
	J. Pérez-Rigueiro, C. Jiménez, L. Vázquez, R. Pérez-Casero, J.M.Martínez- Duart. Nitridation of TiSi₂ thin films by rapid thermal processing. Surface and Coatings Technology 80, 72-75 (1996).
	J. Ramiro, E. García-Camarero Influence of deposition potential and electrolyte composition on the structural and photoelectrochemical properties of electrodeposited mercury cadmium telluride. Journal of Materials Science 31, 2047 (1996).
	J.C. Sánchez-López, A. Fernández, C.F. Conde, A. Conde, C. Morant, J.M. Sanz The melting behavior of passivated nanocrystalline aluminum. NanoStructure Materials Vol 7, (1996).

1997

	R. Guerrero-Lemus, J.D. Moreno, R.J. Martín-Palma, J.M. Martínez-Duart, P. Herrero, M.L. Marcos, J. González-Velasco and P. Gómez. Effect of photoetching on Porous Silicon Morphology. Surface and Interface Analysis 25, 677 (1997).
	P.H. Haumesser, J. Théry, P.Y. Daniel, A. Laurent, J. Perrière, R. Gómez San Román, R. Pérez-Casero. Growth of crystalline doped b-alumina thin films by laser ablation. J. Mater. Chem. 7, 1763-1767 (1997).
	M.J. Hernández, J. Garrido, J. Martínez, and J. Piqueras Compositional and electrical properties of ECR-CVD silicon oxynitrides. Semiconductor Science and Technology 12, 927-932 (1997).
	Jiménez V.M., Caballero A., Fernández A., Sánchez-López J.C., González-Elipe A.R., Trigo J.F., Sanz J.M. Calibration of the Probing Depth by Total Electron Yield of EXAFS Spectra in Oxide Overlayers (Ta₂O₅, TiO₂, ZrO₂) Surface and Interface Analysis 25, 707-714 (1997).
	C. Jiménez, J, Pérez-Rigueiro, L. Vázquez, M. Fernández, R. Pérez-Casero, J.M. Martínez-Duart. Influence of the initial nitrogen content in titanium films on the nitridation an silicidation processes. Thin Solid Films 305, 185-190 (1997).
	C. Jiménez, C. Sánchez-Fernández, C.Morant, M.Fernández. Surface characterization of (TiAl)N deposited on HSS by reactive sputtering Proceedings de European Conference on Applications of Surface and Interface Analysis, ECASIA 1997, John Wiley & Sons, 1047-1050.
	Y. Laaziz, A. Bennouna, M.Y. Elazhari, J. Ramiro Bargueño, A. Outzourhit,N. Chahboun, E.L. Ameziane. A method for monitoring the thickness of semiconductor and dielectric thin films: application to the determination of large-area thickness profiles. Thin Solid Films 303, 255-263 (1997).
	A. Lio, C. Morant, D.F. Ogletree, M. Salmerón. Atomic force microscopy study of the pressure dependent structural and frictional properties of n-Alkanethiols on Gold. Journal Physical Chemistry B 101 Nº24 3, 4767-4773 (1997).
	S. Mahanty, J. M. Merino, M. León. Preparation and Optical Studies on Flash Evaporated Sb₂S₃ Thin Films. J. Vac. Sci. Technol. A 15(6), 3060-3064 (1997).
	R.J. Martín-Palma, R. Guerrero-Lemus, J.D. Moreno and J.M. Martínez-Duart. Electric and photoelectric properties of metal/porous silicon Schottky structures. Proceedings of the 7th European Conference on Applications of Surface and Interface Analysis. ECASIA’97. John Wiley & Sons (1997).
	S.A. McQuaid, S. Holgado, J. Garrido, J. Martínez, J. Piqueras, R.C. Newman and J.H. Tucker. Pasivation, structural modification and etching of amorphous silicon in hydrogen plasmas. Journal of Applied Physics. 81-11, 7612-7618 (1997).
	I. Montero, L. Galán, J.M. Martinez-Duart. Surface reactions of low-energy carbon ions with boron nitride thin films. Journal of Materials Research 12, 1563-1568 (1997).
	O. Najmi, I. Montero, L. Galán, J.M. Albella. Carbon incorporation during the dielectic breakdown process of silicon oxide. Surface and Interface Analysis 25, 94-98 (1997).
	R. Pérez-Casero, R. Gómez San Román, J. Perrière, A. Laurent, W. Seiler, P. Gergaud, D. Keller. Epitaxial growth of CeO₂ on MgO by pulsed laser deposition. Applied Surface Science 109/110, 341-344 (1997).
	J. Pérez-Rigueiro, C. Jiménez, R. Pérez-Casero, J.M. Martínez-Duart. Silicidation process of Si/TiN_x/Ti structures. Journal of Applied Physics 81(2), 781-785 (1997).
	J. Pérez-Rigueiro, P. Herrero, C. Jiménez, R. Pérez-Casero, J.M. Martínez-Duart. Characterization of the interfaces formed during the silicidation process of Ti on Si at low and high temperatures. Surface and Interface Analysis 25, 896-903 (1997).
	Prieto P., Quirós C., Elizalde E., Fernández A., Martín J.M., Sanz J.M. Carbon nitride films synthesized by dual ion beam sputtering. Nuclear Instruments and Methods B 122, 534-537 (1997).
	Quirós C., Prieto P., Morant C., Fernández A., Elizalde E., Sanz J.M. Characterization of carbon nitride films obtained by ion beam assisted sputtering. Proceedings de European Conference on Applications of Surface and Interface Analysis, ECASIA 1997, John Wiley & Sons, 1055-1058.
	J.M. Sanz, G.T. Tyuliev, C. Morant, L. Soriano, J.P. Espinós, A. Fernández and A.R. González-Elipe. Electronic Structure of Transition Metal Oxide Nanostructures. Journal of Surface Analysis 3, 279-285 (1997).
	L. Soriano, M. Abbate, A. Fernández, A. R. González-Elipe and J.M. Sanz. Chemical Analysis of Ternary Ti Oxides using soft X-ray Absorption Spectroscopy. Surface and Interface Analysis 25, 804-808 (1997).
	L. Soriano, M. Abbate, A. Fernandez, A. R. Gonzalez-Elipe, F. Sirotti, G. Rossi and J.M. Sanz. Thermal annealing of defects in highly defective NiO nanoparticles studied by X-ray and electron spectroscopies. Chemical Physics Letters 266, 184-188 (1997).
	L. Soriano, M. Abbate, H. Pen, P. Prieto and J.M. Sanz. The electronic structure of TiN and VN: X-ray and electron spectra compared to band structure calculations. Solid State Communications 102, 291-296 (1997).

Artículos en revistas nacionales.

	A. Climent Font, J.L. Sánchez Antón. La caracterización de aerosoles ambientales del área urbana de Madrid. Ingeniería Municipal 88, 22 (1994).
	Fernández A., Caballero A., Leinen D., González-Elipe A.R., Prieto P., Quirós C., Sanz J.M. Caracterización de láminas delgadas de óxidos y nitruros preparadas por métodos asistidos por bombardeo iónico. Boletín de la Sociedad Española de Cerámica y Vidrio 36 [2-3] 109-115 (1997).

Colaboraciones en libros colectivos.

1992

	E. García-Camarero, B. Tejedor-Miralles, J. Ramiro Undoped low resistivity CdS thin films for CuInSe₂/CdS solar cells. en Renewable Energy; technology and the environment. Ed. A.A. M. Sayigh Pgs. 508-512 Editorial Pergamon Press. New York (1992).
	Yu. E. Makushok, V.P. Parkhutik, J.M. Albella, J.M. Martínez-Duart. Morphology of passive films formed during electrochemical anodization of materials. en Oxides Films on Metals and Alloys. Ed. R.S. Alwitt, B.R. MacDougall & T.A.Ramanarayanan. Pgs. 454-466 . Editorial The Electrochem. Soc. Inc., USA (1992).
	V.P. Parkhutik, J.M. Albella, J.M. Martínez-Duart. Electric Breakdown in Anodic Oxide Films. en Modern Aspects in Electrochemistry (vol. 23). Eds. B.E. Conway, J.O'Bockris and R.E. White. Pgs. 315-391. Editorial Plenum Press. Nueva York, USA (1992).
	V.P. Parkhutik, J.M. Albella, J.M. Martínez-Duart, I. Montero, C. Gómez-Aleixandre. Anodic Oxide Films as Insulating Materials for Electronic Applications. en Trends in Electrochemistry. Ed. J. Menon. Pgs. 105-116 Editorial Research Trends. India (1992).

1993

	C. Palacio. Aplicaciones de la espectroscopía de electrones Auger (AES) en el análisis de materiales. en Curso de Ciencia e Ingeniería de Materiales. Ed. A.J. Vázquez. Pgs. 28/1-28/17. Editorial Centro Nacional de Investigaciones Metalúrgicas. Madrid, España (1993).
	V.P. Parkhutik, J.M. Martínez-Duart, J.M. Albella. Modeling of Porous Structures Formation during Electrochemical Treatment of Materials. en Optical Properties of Low Dimensional Silicon Structures. Eds. D.C. Bensahel , L.T. Canham y S. Ossicini. Pgs. 55-60. Editorial Kluwer Academic Publishers. Londres, Inglaterra (1993).
	J. M. Sanz. Técnicas de análisis de superficies y películas delgadas. en Introducción a la Ciencia de Materiales. Técnicas de Preparación y Caracterizacióvn. Colección Textos Universitarios 20. (C.S.I.C.). Madrid, España (1993).

1994

	S. Holgado, J. Martínez, J. Garrido, J. Piqueras. Ellipsometric characterization of amorphous silicon layers after BF2+ ion implantation en Inst.Conf.Series. Proc. DRIP5. Eds. American Institute of Physics. Washington, USA, (1994)
	J. Perrière, L. Ranno, C. Maréchal, R. Pérez-Casero, R. Gómez San Román, D. Martínez García. Growth of oxide thin films by laser ablation en Laser Materials Processing: Industrial and Microelectronics Applications. SPIE Series, (Vol. 2207). Pgs. 678-689. Editorial Society of Photo-optical Instrumentation Engineers. Washington, USA (1994).

1995

	F.J. Gómez, M.L. Rodríguez-Méndez, J. Piqueras, J. Jiméz, J.A. Saja. Surface morphology of silicon carbide layers deposited by electron resonance plasma. Inst. Conf. Series No 149 (1995).
	M. León, J.L. Martín de Vidales. Rietveld refinement of crystal structures using powder X-ray Diffraction data: A comparative study of synthesized CuGa_1-yIn_yTe₂. en Handbook of advanced materials testing. Eds. Cheremisinoff N.P. & Cheremisinoff P.N. Pgs. 277-287. Editorial Marcel Dekker, Inc. Nueva York, USA (1995).
	J.M. Martínez- Duart, R. Pérez-Casero, R.M. Bueno, G. García-Ayuso, O. Sánchez-Garrido, E. Paule, J.M. Albella. Dielectric and optical coatings. en Materials and Processes for Surface and Interface Engineering. NATO ASI Series, Serie E: Applied Sciences (Vol 290). Ed. Y. Pauleau. Pgs. 529-564. Editorial Klumer Academic Publishers. Amsterdam, Holanda (1995).
	F.Ogletree, J.Hu, X.Xiao, C.Morant, Q.Dai, R.Vollmer, R.Carpick, and M.Salmerón. Friction and load on well defined surfaces studied by AFM. en Forces in Scanning Probe methods.NATO ASI Series E: Applied Sciences. Eds. H.J.Guntherodt, D.Anselmetti, and E.Meyer. Pgs. 337-344 Editorial Kluwer Academic Publishers. Amsterdam, Holanda (1995).

1996

	A. Arranz, C. Palacio, D. Díaz A study of the interface formation and initial oxidation in the Ti-Si system. en Proceedings of the 6th European Conference on Applicationson Surface and Interface Analysis 276 (1996) Eds. H.J. Mathieu, B. Reihl, D. Briggs. Wiley & Sons, Chichester and New York.
	J.M. Martínez Duart y R. Pérez Casero. Deposición física en fase vapor. en Segundo Curso de Ciencia e Ingeniería de la superficie de los Materiales Metálicos. Ed. A.J. Vázquez y J.J. de Damborenea. Pgs. 329-348. Editorial Centro Nacional de Investigaciones Metalúrgicas. Consejo Superior de Investigaciones Científicas. Madrid, España (1996).
	C. Palacio y A. Arranz. Espectroscopía Auger (AES). en Segundo Curso de Ciencia e Ingeniería de la superficie de los Materiales Metálicos. Ed. A.J. Vázquez y J.J. de Damborenea. Pgs. 469-480. Editorial Centro Nacional de Investigaciones Metalúrgicas. Consejo Superior de Investigaciones Científicas. Madrid, España (1996).

1997

J.M. Martínez-Duart, R.J. Martín-Palma, G. García-Ayuso, A. Gutiérrez-Llorente and O. Sánchez-Garrido.
Protective Coatings for Optical Systems.
en Protective Coatings and Thin Films.
Eds. Y. Pauleau and P.B. Barna.
Kluwer Academic Publishers (1997).

Libros.

H. Freller, J.M. Martínez-Duart, Y. Pauleau (editores).
Stimulated Deposition Processes and Ion Beam Synthesis.
Editorial North-Holland. Amsterdam, Holanda (1992).

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